BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.
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Typical base-emitter and collector-emitter saturation voltages. Switching times waveforms with inductive load. August 2 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
Forward bias safe operating area.
Typical DC current gain. August 4 Ptot max and Ptot peak max lines.
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Application information Where application information is given, it is advisory and does not form part of the specification. No liability will be accepted by the publisher for any consequence of its use. SOT; The seating plane is electrically isolated from all terminals.
Region of permissible DC operation. Exposure to limiting values for extended periods may affect device reliability.
Typical base-emitter saturation voltage. Test circuit inductive load. Stress above one or more of the limiting values may cause permanent damage to the device.
Switching times waveforms with resistive load. Product specification This data sheet contains final product specifications. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
August 7 Rev 1. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.
But11af datasheet view
Test circuit resistive load. Nut11af circuit for VCEOsust. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 8 Rev 1. UNIT – – 1. Extension for repetitive pulse operation. Oscilloscope display for VCEOsust.
Normalised power derating and second breakdown curves.
Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Reproduction in whole or in part is prohibited without the prior written consent of the datashewt owner. Reverse bias safe operating area. Refer to mounting instructions for F-pack envelopes.